ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 30 V, 0.8 ohm, 4.5 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V
ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
ROHM
双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3