NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 3.5 A, 100 V, 0.2 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
达林顿双极性晶体管
ON SEMICONDUCTOR
达林顿晶体管, PNP, -100V, D-PAK
VISHAY
场效应管, MOSFET, N沟道, 27W, SOT-223
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
INFINEON
晶体管 双极-射频, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 hFE
NEXPERIA
双极晶体管阵列, 双PNP, 30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V
NEXPERIA
双极晶体管阵列, NPN, 45 V, 390 mW, 100 mA, 290 hFE, SOT-143B
VISHAY
功率场效应管, MOSFET, N沟道, 5.6 A, 650 V, 0.755 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 150 mW, 40 mA, 60 hFE
VISHAY
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.45 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, PNP
BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
INFINEON
晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
VISHAY
晶体管, MOSFET, P沟道, -9.2 A, -8 V, 0.02 ohm, -4.5 V, -400 mV
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
NEXPERIA
晶体管, BISS型, 高电压, NPN, 400V, 500mA, 4-SOT-223