VISHAY
场效应管, MOSFET, P沟道
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 10 V, 4 V
INFINEON
晶体管 双极-射频, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 hFE
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
DIODES INC.
单晶体管 双极, PNP, 400 V, 50 MHz, 2 W, -500 mA, 50 hFE
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, 110 hFE
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
DIODES INC.
晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, 40 V, 100 MHz, 2 W, -3 A, 220 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0088 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 1 W, -1.5 A, 25 hFE
INFINEON
晶体管 双极-射频, NPN, 4 V, 45 GHz, 240 mW, 70 mA, 160 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V
NEXPERIA
单晶体管 双极, PNP, -80 V, 100 MHz, 700 mW, -4.5 A, 280 hFE