ON SEMICONDUCTOR
射频双极性晶体管
ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 100 MHz, 150 mW, -100 mA, 125 hFE
INFINEON
晶体管, 射频FET, 8 V, 40 mA, 200 mW, SOT-143
INFINEON
晶体管, MOSFET, N沟道, 250 mA, 8 V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
MULTICOMP
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 125 hFE
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
NXP
晶体管 双极-射频, NPN, 15 V, 1 GHz, 300 mW, 25 mA, 90 hFE
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
DIODES INC.
单晶体管 双极, NPN, 60 V, 175 MHz, 2 W, 3 A, 200 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -100 mA, 270 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
MULTICOMP
单晶体管 双极, 达林顿, NPN, 300 V, 80 W, 7 A, 150 hFE
VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -25 V, 100 MHz, 225 mW, -500 mA, 40 hFE
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 20 W, 8 A, 1000 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 20V, SOT-563
ON SEMICONDUCTOR
双极性晶体管, PNP, -100V, SOT-23