产品分类：晶体管,规格：功耗 Pd 500mW,
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 210 MHz, 500 mW, 3 A, 465 hFE
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 75 MHz, 500 mW, -2 A, 40 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 20 V, 170 MHz, 500 mW, 1 A, 160 hFE
(EN)
ROHM
单晶体管 双极, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE
(EN)ROHM
单晶体管 双极, PNP, 60 V, 200 MHz, 500 mW, 1 A, 120 hFE
(EN)
ROHM
单晶体管 双极, NPN, 60 V, 200 MHz, 500 mW, 1 A, 120 hFE
ROHM
晶体管, MOSFET, N沟道, 3 A, 30 V, 120 mohm, 10 V, 2.5 V
(EN)
MULTICOMP
单晶体管 双极, PNP, -80 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 500 mW, -600 mA, 200 hFE
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, 60V, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, 20 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 100 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -2.4A, SuperSOT, 整卷
(EN)
