TEXAS INSTRUMENTS
驱动器
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 4 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
SEMIKRON
晶体管, IGBT阵列&模块, 6x NPN, 43 A, 1.85 V, 1.2 kV, Module
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 660 A, 2 V, 1.7 kV, Module
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 232 A, 1.8 V, 1.2 kV, Module
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 231 A, 1.75 V, 1.2 kV, Module
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 616 A, 1.8 V, 1.2 kV, Module
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V, SOIC, 整卷
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
SEMELAB
双路场效应管, MOSFET, N和P沟道, 8 A, 160 V
INTERSIL
双极晶体管阵列, NPN, 8 V, 30 mA, 70 hFE, SOIC
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 30 mA, 300 hFE, SOIC
NXP
射频场效应管, MOSFET, N沟道, 110V, TO-272
SEMIKRON
晶体管, IGBT模块, 60A, 600V, T-98
SEMIKRON
晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module