产品分类：晶体管,规格：晶体管封装类型 TO-263AB,
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 200 V, 0.0186 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
达林顿晶体管, NPN, 100V, D2-PAK
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 47 A, 1.65 V, 206 W, 600 V, TO-263AB, 3 引脚
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 32 A, 1.55 V, 140 W, 600 V, TO-263AB, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
晶体管, IGBT, 单路, 1.55V, 32A, TO-263AB
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)
