ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
ROHM
双路场效应管, MOSFET, N和P沟道, 5.5 A, 20 V, 0.03 ohm, 4.5 V, 1.5 V
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm
ROHM
晶体管 双极预偏置/数字, 单路PNP, 50 V, -100 mA, 10 kohm, 10 kohm
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
ROHM
单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
ROHM
双极晶体管阵列, NPN, 50 V, 300 mW, 150 mA, 120 hFE, SC-74
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
ROHM
功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚