产品分类：半导体 - 分立器件,规格：漏源电压, Vds 60V,
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0105 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 60V, 1.6OHM, 280mA, SOT-563F-6
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 240mA, SOT-323-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
(EN)
