产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 17mohm,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -8A, SOIC
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 17 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8 A, -30 V, 17 mohm, -10 V, -1.8 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 20 A, 100 V, 17 mohm, 10 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 11.8A/-8.9A, SOIC-8, 整卷
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 17 mohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 17 mohm, 10 V, 2.5 V
(EN)
