VISHAY
场效应管, MOSFET, N沟道
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
INFINEON
场效应管, MOSFET, 双N沟道
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.018 ohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC
VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V
STMICROELECTRONICS
小信号肖特基二极管, 单, 45 V, 10 A, 590 mV, 100 A, 175 °C
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, Trench, AEC-Q101, N沟道, 30 A, 40 V, 0.0056 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.9 ohm, 10 V, 2 V