ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 39 A, 650 V, 0.06 ohm, 18 V, 5.6 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 161 W, 650 V, TO-263S, 3 引脚
ROHM
二极管 小信号, 开关, 单, 90 V, 130 mA, 1.2 V, 4 ns, 600 mA
ROHM
单管二极管 齐纳, 6.8 V, 500 mW, DO-34, 2 引脚, 175 °C
ROHM
单管二极管 齐纳, 8.2 V, 500 mW, DO-34, 2 引脚, 175 °C
ROHM
单晶体管, IGBT, 场截止沟道, 8 A, 1.65 V, 65 W, 650 V, TO-263S, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
ROHM
二极管 小信号, 无引线, 250 V, 200 mA, 1.5 V, 75 ns, 625 mA