产品分类：半导体 - 分立器件,规格：功耗 Pd 31W,
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.015 ohm, -10 V, -1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0096OHM, 16.5A, MLP-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17.6 A, 40 V, 0.0324 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 12.8 A, 60 V, 0.059 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0034 ohm, 10 V, 2.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.033 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 530 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.35 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 30V, 40A, POWERPAIR-8
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.33 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 100 V, 0.086 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
