VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 340 mohm, 10 V, 2.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.7 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
SEMELAB
晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
ROHM
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 3.3 ohm, 10 V, 5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V