产品分类：半导体 - 分立器件,规格：功耗 Pd 250W,
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 58 A, 2.1 V, 250 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 450 V, 250 W, 84 A, 120 hFE
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-220, 3 引脚
(EN)
INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 75 A, 1.45 V, 250 W, 650 V, Module
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 95 A, 1.45 V, 250 W, 600 V, Module
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 200 V, 250 W, 100 A, 27 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 250 W, 600 V, TO-247, 3 引脚
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-220AB-3
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3
(EN)
INFINEON
晶体管, IGBT, 单路, 1.6V, 65A, TO-247AD
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.317 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
晶体管, NPN, TO-3封装
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.057 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 42 A, 650 V, 0.056 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17.5 A, 950 V, 0.275 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE
(EN)
