The AP2310GN-HF-3TR from Advanced Power Electronics Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combination of low resistance, extremely efficient and cost effectiveness. The device is best suited for commercial and industrial applications.
Simple drive requirement
Drain to source voltage of 60V
Gate to source voltage of ±20V
Continuous drain current (Id) of 3A at Vgs 10V and 25°C
Power dissipation (pd) of 1.38W
Operating junction temperature range from -55°C to 150°C