ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
NEXPERIA
二极管阵列 齐纳, 9.1 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663
INFINEON
Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650 V, 20 A, 29 nC, TO-247
STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247
ROHM
二极管阵列 齐纳, Bidirectional, 33 V, 200 mW, -55 °C, 150 °C, SOT-323
STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 8 A, 23.5 nC, TO-263
ROHM
二极管阵列 齐纳, Bidirectional, 6.8 V, 200 mW, -55 °C, 150 °C, SOT-323
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 双共阴极, 200 V, 30 A, 1 V, 45 ns, 325 A
INFINEON
快速/超快功率二极管, 单, 650 V, 40 A, 1.35 V, 77 ns, 320 A
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 9 V, SOT-23, JFET
STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC
ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
VISHAY
快速/超快功率二极管, 超快, 单, 600 V, 15 A, 3.4 V, 30 ns, 120 A
IXYS SEMICONDUCTOR
快速/超快功率二极管, 双共阴极, 600 V, 30 A, 1.6 V, 35 ns, 300 A
STMICROELECTRONICS
快速/超快二极管, 双共阴极, 200 V, 30 A, 1.4 V, 25 ns, 140 A