The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.
- Revolutionary semiconductor material-silicon carbide
- Reduced cooling requirements
- No reverse recovery/no forward recovery
- Temperature independent switching behaviour
- High surge current capability
- Increased efficiency compared to silicon diode alternatives
- Enabling higher frequency/increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
- Reduced risks of thermal runaway
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