INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 1.9 A, 20 V, 0.069 ohm, 4.5 V, 900 mV
NEXPERIA
晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 1.33 A, 20 V, 0.3 ohm, 5 V, 900 mV
VISHAY
晶体管, MOSFET, P沟道, -140 mA, -20 V, 8 ohm, -4.5 V, 900 mV
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
INFINEON
场效应管, MOSFET, P沟道, -12V, -16A, SOIC-8
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.7 A, 20 V, 0.069 ohm, 4.5 V, 900 mV