NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -12 V, 0.08 ohm, -4.5 V, -600 mV
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
VISHAY
场效应管, MOSFET, N沟道
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
NEXPERIA
晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
VISHAY
MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
ROHM
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.08 ohm, -10 V, -2.5 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V
WOLFSPEED
单晶体管 双极, Six N Channel, 29.5 A, 1.2 kV, 0.08 ohm, 20 V, 2.2 V
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 数字音频 150V, 17A, TO-220AB
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V
TOSHIBA
晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V