BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 30V, SC-88
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 1.5 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
NEXPERIA
单晶体管 双极, PNP, -60 V, 220 MHz, 270 mW, 1 A, 350 hFE
NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE
BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE
NEXPERIA
单晶体管 双极, PNP, 60 V, 220 MHz, 270 mW, 1 A, 350 hFE
NEXPERIA
单晶体管 双极, PNP, 60 V, 220 MHz, 270 mW, 1 A, 350 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 1.63 A, 30 V, 0.077 ohm, 4.5 V, 1 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V