DIODES INC.
晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 400 MHz, 700 mW, 1 A, 300 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 520 MHz, 700 mW, -700 mA, 200 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 500 MHz, 700 mW, 500 mA, 300 hFE
INFINEON
晶体管 双极-射频, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
RAYCHEM - TE CONNECTIVITY
齐纳二极管, 9.8V
DIODES INC.
晶体管, MOSFET, N沟道, 320 mA, 100 V, 4 ohm, 10 V, 2.4 V
NEXPERIA
单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 500 mA, 35 hFE, SuperSOT
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, HFE 300
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
INFINEON
晶体管 双极-射频, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 hFE
DIODES INC.
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V
NEXPERIA
单晶体管 双极, PNP, -80 V, 100 MHz, 700 mW, -4.5 A, 280 hFE
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 80 mohm, -4.5 V, -700 mV
NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 700 mW, -1 A, 220 hFE