INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 0.145 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 150 mohm, -10 V, -5 V
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -100 V, 410 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -80 A, -55 V, 18 mohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, -23A, TO-220AB
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 2.6A, SOT-223
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
VISHAY
晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V