INFINEON
晶体管, MOSFET, N沟道, 85 A, 75 V, 0.0056 ohm, 10 V, 3.7 V
FAGOR ELECTRONICA
三端双向可控硅, 600 V, 5 mA, 1.3 V, TO-220AB, 30 A
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
LITTELFUSE
晶闸管, 600 V, 200 μA, 0.8 A, 800 mA, SOT-223, 4 引脚
INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -30 V, 0.013 ohm, -10 V, -1.8 V
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, TO-252, 30 A
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 75 MHz, 800 mW, 2 A, 75 hFE
STMICROELECTRONICS
晶体管, 射频FET, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.033 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.16 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V