NTE ELECTRONICS
收发器芯片, NPN
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
INFINEON
单晶体管, IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 引脚
NTE ELECTRONICS
双极性晶体管
NTE ELECTRONICS
双极性晶体管, PNP, 140V, 100W
NTE ELECTRONICS
双极性晶体管
NTE ELECTRONICS
双极性晶体管
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2.9 V
NXP
射频晶体管, LDMOS, 100W, NI-780
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-247AC
ROHM
晶体管, MOSFET, N沟道, 65 A, 100 V, 0.0065 ohm, 10 V, 2.5 V
INFINEON
单晶体管, IGBT, N通道, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 引脚
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, 双N沟道, 30 A, 1.9 V, 100 W, 600 V, i4-PAC
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0159 ohm, 10 V, 1.6 V
ALLEGRO SANKEN
单晶体管 双极, 达林顿, NPN, 150 V, 55 MHz, 100 W, 10 A, 5000 hFE
TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
STMICROELECTRONICS
单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 7 A, 70 hFE
ON SEMICONDUCTOR
双极性晶体管