INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 80V, 30A, D-PAKS
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 70 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, P沟道, -23 A, -100 V, 117 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, N沟道, 110 A, 30 V, 0.0033 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V