TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
TEXAS INSTRUMENTS
芯片
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
VISHAY
场效应管, MOSFET, N沟道, 40V, 3.9A, TO-236, 整卷
VISHAY
场效应管, P通道, MOSFET, -150V, 690MA, TO-236
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
VISHAY
场效应管, MOSFET, P沟道, -40V, 3A, TO-236, 整卷
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
VISHAY
场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236
VISHAY
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -20 V, 0.135 ohm, -4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -20 V, 0.135 ohm, -4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V