VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 40 V, 0.0048 ohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 17 A, 30 V, 0.0055 ohm, 4.5 V, 1.2 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 380 mohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 232 A, 1.8 V, 1.2 kV, Module
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 231 A, 1.75 V, 1.2 kV, Module
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 450 mohm, 4.5 V, 800 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V