产品分类：双路场效应管MOSFET晶体管,规格：漏源电压, Vds 30V,
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 微型8, 整卷
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.9 A, 30 V, 0.0174 ohm, 10 V, 1.8 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 15.5 mohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 30V, 8A, SOIC
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管阵列, MOSFET, 双N沟道, 30V, 3.6A, PQFN-6
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 740 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 740 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 125 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
