INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.0095 ohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.007 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 14.4 A, 100 V, 0.051 ohm, 10 V, 4 V
INFINEON
晶体管 双极-射频, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 51 A, 100 V, 0.008 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, 汽车, N沟道, 32 A, 100 V, 0.021 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 18 A, 60 V, 0.028 ohm, 10 V, 2 V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 100 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 50 MHz, 225 mW, -500 mA, 25 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
INFINEON
场效应管, MOSFET, N沟道, 60V, 0.23A, SOT-23-3
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 24 A, 100 V, 0.026 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 150 MHz, 325 mW, -1 A, 85 hFE
INFINEON
场效应管, MOSFET, P沟道, -30V, -100A, TDSON-8
INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
INFINEON
场效应管, MOSFET, 双路, N沟道, 20V, 0.88A, SOT-363-6
ROHM
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 187 A, 40 V, 0.0016 ohm, 10 V, 3.9 V