TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
NEXPERIA
双极晶体管阵列, PNP, -30 V, 2.3 W, -4.8 A, 200 hFE, SOIC
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206