ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 1 V
NEXPERIA
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 200 mW, -100 mA, 220 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, 200 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV
INFINEON
晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 70 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 30 V, 0.8 ohm, 4.5 V, 1.5 V
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 1 kohm, 10 kohm, 0.1 电阻比率
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 32 V, 100 MHz, 225 mW, 800 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 40 V, 30 μA, 90 μA, 1.8 V, SOT-23, JFET
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 380 mW, 200 mA, 200 hFE, SC-74