The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 90mohm at Vgs of 10V
Power dissipation Pd of 70W at 25°C
Continuous drain current Id of 17A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C