ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
INFINEON
晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
NEXPERIA
单晶体管 双极, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 50 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 175 mW, 20 mA, 100 hFE