VISHAY
单管二极管 齐纳, 5.1 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
VISHAY
单管二极管 齐纳, 10 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0015 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 19A, TO-252
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 30V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.6 A, 20 V, 37 mohm, 4.5 V, 700 mV
NEXPERIA
双极晶体管阵列, NPN, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
VISHAY
单管二极管 齐纳, 3.6 V, 2.3 W, DO-219AB, 5 %, 2 引脚, 150 °C
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.6 A, -60 V, 0.145 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
NEXPERIA
双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC
VISHAY
场效应管, P通道, MOSFET, -60V, 19A, TO-252, 整卷