The CY62146EV30LL-45ZSXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enable and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.