FM24C04B-G,2077745,芯片, 存储器, FRAM, 4K, I2C, 8SOIC,CYPRESS SEMICONDUCTOR
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FM24C04B-G - 

芯片, 存储器, FRAM, 4K, I2C, 8SOIC

CYPRESS SEMICONDUCTOR FM24C04B-G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
FM24C04B-G
仓库库存编号:
2077745
技术数据表:
(EN)
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

FM24C04B-G产品概述

The FM24C04B-G is a 4-Kbit non-volatile Ferroelectric Random Access Memory (F-RAM), performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. It is capable of supporting 1014 read/write cycles or 100million times more write cycles than EEPROM.
  • High-endurance 100 trillion read/writes
  • NoDelay? writes
  • Low power consumption
  • 100μA at 100kHz Active current
  • 4μA Typical standby current
  • Advanced high-reliability ferroelectric process
  • Supports legacy timings for 100 and 400kHz

计算机和计算机周边

FM24C04B-G产品信息

  存储器类型  FRAM  
  存储器容量  4Kbit  
  NVRAM 内存配置  512 x 8位  
  芯片接口类型  I2C  
  存取时间  -  
  封装类型  SOIC  
  针脚数  8引脚  
  电源电压最小值  4.5V  
  电源电压最大值  5.5V  
  工作温度最小值  -40°C  
  工作温度最高值  85°C  
  封装  每个  
  产品范围  -  
  MSL  MSL 1 -无限制  
关键词         

FM24C04B-G相关搜索

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电话:400-900-3095
QQ:800152669

FM24C04B-G产地与重量

原产地:
United States

进行最后一道重要生产流程所在的国家

RoHS 合规:
税则号:
85423261
重量(千克):
.001814
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