The FM25H20-DG is a 2MB non-volatile memory FRAM, employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.
2MB Ferroelectric Random Access Memory (F-RAM) Logically Organized as 256 K x 8
High-endurance 100 Trillion (1014) Read/Writes
151-year Data Retention
NoDelay? Writes
Advanced High-reliability Ferroelectric Process
Very Fast Serial Peripheral Interface (SPI)
Up to 40MHz Frequency
Direct Hardware Replacement for Serial Flash and EEPROM
Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)
Sophisticated Write Protection Scheme
Hardware Protection Using Write Protect (WP) Pin
Software Protection Using Write Disable Instruction
Software Block Protection for 1/4, 1/2 or Entire Array
Low-power consumption, 1mA active current at 1MHz, 80μA standby current, 3μA sleep mode current
