The FDN5618P from Fairchild is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.
High performance trench technology for extremely low Rds(ON)
Drain to source voltage (Vds) of -60V
Gate to source voltage of ±20V
Continuous drain current (Id) of -1.25A
Power dissipation (pd) of 500mW
Low on state resistance of 185mohm at Vgs -4.5V
Operating junction temperature range from -55°C to 150°C