The NDS356AP is a P-channel logic level enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. Suitable for low voltage applications such as battery powered circuits for fast high side switching and low in-line power loss.
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability