The MB85RC128PNF-G-JNE1 is a 128kB I2C Ferroelectric Random Access Memory (FRAM) stand-alone chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RC128 adopts the 2-wire serial interface. Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at least 101? cycles, significantly out performing flash memory and E2PROM in the number. The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash memory nor E2PROM.