The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
Excellent switching performance
World's lowest RDS (ON)
Very low Qg?and Qgd
Excellent gate charge x RDS (ON)?product (FOM)
Halogen-free, Green device
Qualified according to JEDEC for target application