The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Industry's lowest R?DS(on)
Highest current capability up to 300A
Very low package parasitic and inductances
Less paralleling and cooling required
Highest system reliability
Enabling very compact design
Normal level
Excellent gate charge x RDS (ON) product (FOM)
Extremely low ON-resistance RDS (ON)
High current capability
Qualified according to JEDEC for target application