The IRF450 is a 500V single N-channel HEXFET? MOSFET features efficient geometry and unique processing of this latest state-of-the-art design achieves, very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
- Repetitive avalanche rating
- Dynamic dV/dt rating
- Hermetically sealed
- Simple drive requirements
- Easy to parallel
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