IS42S16320B-7TLI,1869963,存储芯片, SDRAM, IND, 32M X 16, 3V, 54TSOP2,INTEGRATED SILICON SOLUTION (ISSI)
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IS42S16320B-7TLI - 

存储芯片, SDRAM, IND, 32M X 16, 3V, 54TSOP2

INTEGRATED SILICON SOLUTION (ISSI) IS42S16320B-7TLI
声明:图片仅供参考,请以实物为准!
制造商产品编号:
IS42S16320B-7TLI
仓库库存编号:
1869963
技术数据表:
(EN)
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IS42S16320B-7TLI产品概述

The IS42S16320B-7TLI is a 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as 8M x16x4 banks, 54-pin TSOPII and 54-ball W-BGA. The 512Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 536,870,912 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 134,217,728-bit bank is organized as 8,192 rows by 1024 columns by 16 bits. Each of the x8's 134,217,728-bit banks is organized as 8,192 rows by 2048 columns by 8 bits. The 512Mb SDRAM includes an AUTO REFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
  • 143MHz Clock frequency
  • 7ns Speed
  • Fully synchronous, all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • 3.3V Vdd, 3.3V Vddq Single power supply
  • LVTTL interface
  • Programmable burst length - 1, 2, 4, 8, full page
  • Sequential/Interleave programmable burst sequence
  • Auto refresh (CBR)
  • Self refresh
  • 8K Refresh cycles every 16ms (A2 grade) or 64ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency - 2, 3 clocks
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

工业, 商业, 计算机和计算机周边

IS42S16320B-7TLI产品信息

  DRAM 内存配置  4 BLK (8M x 16)  
  存取时间  5.4ns  
  页面尺寸  512Mbit  
  针脚数  54引脚  
  封装类型  TSOP-II  
  工作温度最小值  -40°C  
  工作温度最高值  85°C  
  芯片接口类型  LVTTL  
  封装  每个  
  产品范围  -  
  MSL  MSL 5 - 48小时  
关键词         

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IS42S16320B-7TLI相关搜索

DRAM 内存配置 4 BLK (8M x 16)  INTEGRATED SILICON SOLUTION (ISSI) DRAM 内存配置 4 BLK (8M x 16)  DRAM DRAM 内存配置 4 BLK (8M x 16)  INTEGRATED SILICON SOLUTION (ISSI) DRAM DRAM 内存配置 4 BLK (8M x 16)   存取时间 5.4ns  INTEGRATED SILICON SOLUTION (ISSI) 存取时间 5.4ns  DRAM 存取时间 5.4ns  INTEGRATED SILICON SOLUTION (ISSI) DRAM 存取时间 5.4ns   页面尺寸 512Mbit  INTEGRATED SILICON SOLUTION (ISSI) 页面尺寸 512Mbit  DRAM 页面尺寸 512Mbit  INTEGRATED SILICON SOLUTION (ISSI) DRAM 页面尺寸 512Mbit   针脚数 54引脚  INTEGRATED SILICON SOLUTION (ISSI) 针脚数 54引脚  DRAM 针脚数 54引脚  INTEGRATED SILICON SOLUTION (ISSI) DRAM 针脚数 54引脚   封装类型 TSOP-II  INTEGRATED SILICON SOLUTION (ISSI) 封装类型 TSOP-II  DRAM 封装类型 TSOP-II  INTEGRATED SILICON SOLUTION (ISSI) DRAM 封装类型 TSOP-II   工作温度最小值 -40°C  INTEGRATED SILICON SOLUTION (ISSI) 工作温度最小值 -40°C  DRAM 工作温度最小值 -40°C  INTEGRATED SILICON SOLUTION (ISSI) DRAM 工作温度最小值 -40°C   工作温度最高值 85°C  INTEGRATED SILICON SOLUTION (ISSI) 工作温度最高值 85°C  DRAM 工作温度最高值 85°C  INTEGRATED SILICON SOLUTION (ISSI) DRAM 工作温度最高值 85°C   芯片接口类型 LVTTL  INTEGRATED SILICON SOLUTION (ISSI) 芯片接口类型 LVTTL  DRAM 芯片接口类型 LVTTL  INTEGRATED SILICON SOLUTION (ISSI) DRAM 芯片接口类型 LVTTL   封装 每个  INTEGRATED SILICON SOLUTION (ISSI) 封装 每个  DRAM 封装 每个  INTEGRATED SILICON SOLUTION (ISSI) DRAM 封装 每个   产品范围 -  INTEGRATED SILICON SOLUTION (ISSI) 产品范围 -  DRAM 产品范围 -  INTEGRATED SILICON SOLUTION (ISSI) DRAM 产品范围 -   MSL MSL 5 - 48小时  INTEGRATED SILICON SOLUTION (ISSI) MSL MSL 5 - 48小时  DRAM MSL MSL 5 - 48小时  INTEGRATED SILICON SOLUTION (ISSI) DRAM MSL MSL 5 - 48小时  
电话:400-900-3095
QQ:800152669

IS42S16320B-7TLI产地与重量

原产地:
Taiwan

进行最后一道重要生产流程所在的国家

RoHS 合规:
税则号:
85423231
重量(千克):
.005
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