The IRF9530NPBF from International Rectifier is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is -100V
Gate to source voltage is ±20V
On resistance Rds(on) of 200mohm
Power dissipation Pd of 79W at 25°C
Continuous drain current Id of -14A at Vgs -10V and 25°C
Operating junction temperature range from -55°C to 175°C