The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
High isolation voltage
Excellent thermal transfer
Increased temperature and power cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances offer easier to drive and faster switching
Very low insertion inductance
No beryllium oxide (BeO) or other hazardous materials
