The JS28F00AP33EFA is a 1GB parallel NOR Flash EMBedded Memory features high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options. The product family is manufactured using Micron 65nm process technology. The NOR flash device provides high performance at low voltage on a 16-bit data bus. Upon initial power up or return from reset, the device defaults to asynchronous page-mode read. Configuring the read configuration register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory PROGRAM and ERASE operations. Designed for low-voltage systems, the device supports READ operations with VCC at the low voltages and ERASE and PROGRAM operations with VPP at the low voltages or VPPH.
- High performance
- Symmetrically blocked architecture
- Blank check to verify an erased block
- 52MHz Continuous synchronous read current - 21mA typical, 24mA maximum
- Absolute write protection - VPP = VSS
- Power-transition erase/program lockout
- Individual zero-latency block locking
- Individual block lock-down
- Password access
- Flash data integrator optimized
- Basic command set and extended function Interface (EFI) command set compatible
- Common flash interface
- Minimum 100000 erase cycles per block
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