The MC13917-434EVK features the MBC13917, which is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This device is designed for a wide range of general purpose RF applications, yet has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.
- 4.7 mA typical bias current at Vcc = 2.7V
- 2.1 to 3.3V supply
- Industry standard MLPD-6 leadless package
- NFmin (device level) = 0.95dB at 900MHz
- 6.5dBm typical output power at -10dBm Pin at 900MHz, Vcc = 2.7V
- 46dB typical reverse isolation (device level) at 434MHz, Vcc = 2.7V
- 4.7mA typical bias current at Vcc = 2.7V
- Industry standard MLPD 6 leadless package
- 2.1V to 3.3V supply
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