The 1N5822G is a 2-pin 40V general purpose Schottky Barrier Rectifier features an epitaxial construction with oxide passivation and metal overlap contact. The Schottky rectifier employs the Schottky barrier principle in a large area metal-to-silicon power diode. It has state-of-the-art geometry. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, freewheeling diodes and polarity protection diodes.